M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive VCE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.

Results: 8
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (ARS) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Package / Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
STMicroelectronics IGBTs Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT
Datasheet
912In Stock
$ 15.485,92
$ 8.473,76
$ 7.360,16
Min.: 1
Mult.: 1
Si Max247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 100 A 535 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
Datasheet
274In Stock
1.000Expected 9/7/2027
$ 11.257,74
$ 7.377,56
$ 5.428,77
$ 4.819,78
$ 4.280,38
Min.: 1
Mult.: 1
Si TO-220-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
Datasheet
327In Stock
$ 12.614,94
$ 7.238,36
$ 6.055,17
$ 5.620,17
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
Datasheet
445In Stock
$ 9.917,95
$ 6.055,17
$ 4.732,78
$ 3.758,38
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 30 A 283 W - 55 C + 175 C M Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Datasheet
1.393Expected 12/4/2026
$ 11.240,34
$ 7.360,16
$ 5.411,37
$ 4.819,78
$ 4.280,38
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
Datasheet
600Expected 8/20/2027
$ 10.874,95
$ 6.176,97
$ 5.794,17
$ 4.593,58
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
Datasheet
592Expected 8/20/2027
$ 8.595,56
$ 5.672,37
$ 4.019,38
$ 3.236,38
$ 3.097,18
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Datasheet
Non-Stocked Lead-Time 22 Weeks
$ 12.319,14
$ 8.247,56
$ 6.629,37
$ 5.881,17
$ 5.219,97
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 326 W - 55 C + 175 C M Tube