40V OptiMOS Power MOSFETs

Infineon 40V OptiMOS Power MOSFETs feature 35% lower RDS(on) and 45% lower Figure of Merit (RDS(on) x Qg) compared to alternative devices. These devices are optimized for synchronous rectification in switched-mode power supplies (SMPS) as well as a broad range of industrial applications such as motor control, solar microinverters, and fast switching DC/DC converters. In addition, this new generation of 40V devices offers higher switching frequencies and is enabled, which results in even higher power density.  A monolithic integrated Schottky-like diode in the 40V SuperSO8 package (5mm x 6mm) leads to higher efficiency and a drastic reduction of the voltage overshoot. This in turn reduces the need for a snubber circuit and saves engineering effort.

Resultados: 3
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (ARS) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 FL OptiMOS 49.263En existencias
Min.: 1
Mult.: 1
: 5.000

Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 FL OptiMOS 39.457En existencias
Min.: 1
Mult.: 1
: 5.000

Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 FL OptiMOS
15.000En pedido
Min.: 1
Mult.: 1
: 5.000