GT30J121(Q)

Toshiba
757-GT30J121(Q)
GT30J121(Q)

Mfr.:

Description:
IGBTs 600V/30A DIS

ECAD Model:
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In Stock: 82

Stock:
82 Can Ship Immediately
Factory Lead-Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$ -,--
Ext. Price:
$ -,--
Est. Tariff:

Pricing (ARS)

Qty. Unit Price
Ext. Price
$ 6.945,12 $ 6.945,12
$ 4.586,40 $ 45.864,00
$ 3.226,86 $ 322.686,00
$ 2.653,56 $ 1.326.780,00
$ 2.489,76 $ 2.489.760,00

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: IGBTs
RoHS:  
Si
TO-3P-3
Through Hole
Single
600 V
2 V
- 20 V, 20 V
30 A
170 W
- 55 C
+ 150 C
GT30J121
Tube
Brand: Toshiba
Continuous Collector Current Ic Max: 30 A
Product Type: IGBT Transistors
Factory Pack Quantity: 100
Subcategory: IGBTs
Unit Weight: 6,756 g
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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99